Implantation of sodium ions into germanium
- 17 February 2012
- journal article
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 46 (2), 257-262
- https://doi.org/10.1134/s1063782612020169
Abstract
The donor properties of Na atoms introduced by ion implantation into p-Ge with the resistivity 20–40 Ω cm are established for the first time. Na profiles implanted into Ge (the energies 70 and 77 keV and the doses (0.8, 3, 30) × 1014 cm−2) are studied. The doses and annealing temperatures at which the thermoprobe detects n-type conductivity on the sample surface are established. After implantation, the profiles exhibit an extended tail. The depth of the concentration maximum is in good agreement with the calculated mean projected range of Na ions R p . Annealing for 30 min at temperatures of 250–700°C brings about a redistribution of Na atoms with the formation of segregation peaks at a depth, which is dependent on the ion dose, and is accompanied by the diffusion of Na atoms to the surface with subsequent evaporation. After annealing at 700°C less than 7% of the implanted ions remain in the matrix. The shape of the profile tail portions measured after annealing at temperatures 300–400°C is indicative of the diffusion of a small fraction of Na atoms into the depth of the sample.Keywords
This publication has 11 references indexed in Scilit:
- Implantation-induced damage in Ge: strain and disorder profiles during defect accumulation and recoveryJournal of Physics D: Applied Physics, 2009
- Characterization of silicon doped with sodium upon high-voltage implantationJournal of Surface Investigation: X-Ray, Synchrotron and Neutron Techniques, 2009
- Amorphization kinetics of germanium during ion implantationJournal of Applied Physics, 2009
- Erbium in crystal silicon: Segregation and trapping during solid phase epitaxy of amorphous siliconJournal of Applied Physics, 1994
- Sodium-ion implantation into siliconphysica status solidi (a), 1988
- A systematic analysis of defects in ion-implanted siliconApplied Physics A, 1988
- Radiation damage and substitutional chemical impurity effects in single-crystal germanium bombarded with 40-keV B+, Al+, Ga+, Ge+, P+, As+, and Sb+ ionsCanadian Journal of Physics, 1968
- Solubility and diffusion coefficient of sodium and potassium in siliconSolid-State Electronics, 1967
- The solubility of sodium in siliconJournal of Physics and Chemistry of Solids, 1965
- Einbau von Natrium in Silizium durch DiffusionPhysica Status Solidi (b), 1964