Resistance Noise in Electrically Biased Bilayer Graphene
- 25 March 2009
- journal article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 102 (12), 126805
- https://doi.org/10.1103/physrevlett.102.126805
Abstract
We demonstrate that the low-frequency resistance fluctuations, or noise, in bilayer graphene are strongly connected to its band structure and display a minimum when the gap between the conduction and valence band is zero. Using double-gated bilayer graphene devices we have tuned the zero gap and charge neutrality points independently, which offers a versatile mechanism to investigate the low-energy band structure, charge localization, and screening properties of bilayer graphene.Keywords
This publication has 23 references indexed in Scilit:
- Disorder-induced tail states in gapped bilayer graphenePhysical Review B, 2008
- Electron delocalization in bilayer graphene induced by an electric fieldPhysical Review B, 2008
- Transport Measurements Across a Tunable Potential Barrier in GraphenePhysical Review Letters, 2007
- Ab initiotheory of gate induced gaps in graphene bilayersPhysical Review B, 2007
- Impurities in a Biased Graphene BilayerPhysical Review Letters, 2007
- Asymmetry gap in the electronic band structure of bilayer graphenePhysical Review B, 2006
- Modulation origin ofnoise in two-dimensional hoppingPhysical Review B, 2001
- Universal Conductance Fluctuations in Three Dimensional Metallic Single Crystals of SiPhysical Review Letters, 2000
- Unexpected Behavior of the Local Compressibility near theMetal-Insulator TransitionPhysical Review Letters, 2000
- Dependence ofNoise on Defects Induced in Copper Films by Electron IrradiationPhysical Review Letters, 1985