Direct Evidence for Random-Alloy Splitting of Cu Levels in
- 8 October 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 53 (15), 1501-1503
- https://doi.org/10.1103/physrevlett.53.1501
Abstract
A splitting of the Cu-related 1.36-eV luminescence in GaAs into a set of lines in the alloy system is interpreted in a model with only the nearest-neighbor group-V shell influencing the defect levels. Experiental peak intensities are in good agreement with simple calculations and the binding energies of the defects are found to follow calculated chemical trends for defect pairs. Results for the ternary alloys are extrapolated to and compared with the case of Cu in GaP.
Keywords
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