Fabrication of in-plane gate transistors on hydrogenated diamond surfaces
- 10 February 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (6), 988-990
- https://doi.org/10.1063/1.1545152
Abstract
The highly conductive surface layer induced in diamond by hydrogen termination has been used to fabricate in-plane gate transistors. The conductive channel has been separated from the Ohmic gate contacts by insulating thin lines, obtained by using a combination of electron-beam lithography with surface oxidation. Oxidized lines of about 100 nm show excellent blocking properties, with leakage current of 0.3 pA/μm at 100 V and room temperature. In-plane transistor properties are reported for operation at 77 K and room temperature with good saturation characteristic and complete pinch-off.Keywords
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