Analysis of a transient region during the initial stage of atomic layer deposition
- 1 December 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 88 (11), 6327-6331
- https://doi.org/10.1063/1.1321775
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Kinetic modeling of film growth rates of TiN films in atomic layer depositionJournal of Applied Physics, 2000
- Metal–organic atomic-layer deposition of titanium–silicon–nitride filmsApplied Physics Letters, 1999
- Atomic Layer Deposition of TiN Films by Alternate Supply of Tetrakis(ethylmethylamino)-Titanium and AmmoniaJapanese Journal of Applied Physics, 1998
- Atomic layer deposition of ZnO transparent conducting oxidesApplied Surface Science, 1997
- Atomic-layer chemical-vapor-deposition of silicon-nitrideApplied Surface Science, 1997
- Atomic layer epitaxy of germaniumApplied Surface Science, 1994
- A solution to the surface arsenic stoichiometric problem at the GaAs(001) growth surface in atomic layer expitaxyApplied Surface Science, 1994