Modeling of strained quantum-well lasers with spin-orbit coupling
- 1 June 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Selected Topics in Quantum Electronics
- Vol. 1 (2), 218-229
- https://doi.org/10.1109/2944.401200
Abstract
No abstract availableThis publication has 27 references indexed in Scilit:
- Band-structure engineering in strained semiconductor lasersIEEE Journal of Quantum Electronics, 1994
- The theory of strained-layer quantum-well lasers with bandgap renormalizationIEEE Journal of Quantum Electronics, 1994
- Measurement of differential gain and linewidth enhancement factor of 1.5-μm strained quantum-well active layersIEEE Journal of Quantum Electronics, 1994
- Conduction-band and valence-band structures in strained As/InP quantum wells on (001) InP substratesPhysical Review B, 1993
- Strain dependence of the linewidth enhancement factor in long-wavelength tensile- and compressive-strained quantum-well lasersIEEE Photonics Technology Letters, 1993
- Dependence of polarization, gain, linewidth enhancement factor, and K factor on the sign of the strain of InGaAs/InP strained-layer multiquantum well lasersApplied Physics Letters, 1991
- Differential gain and linewidth enhancement factor of 1.5- mu m multiple-quantum-well active layers with and without biaxially compressive strainIEEE Photonics Technology Letters, 1991
- Nonparabolicity effects in a quantum well: Sublevel shift, parallel mass, and Landau levelsPhysical Review B, 1989
- Optical gain in a strained-layer quantum-well laserIEEE Journal of Quantum Electronics, 1988
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957