Bolometer with thermosensitive layer made of vanadium oxide VO x

Abstract

The electrical parameters of the thermosensitive layer of VO _x bolometer and the morphology of its surface have been studied. The relative measurement error caused by the VO _x oxide layer has been determined. Calculated and experimental data on the heating of the VO _x layer by 1 and 200°C in the wavelength ranges 0.5–3.39 μm and 5.0–12 μm are given as a function of pulse duration in the range of 1–10⁻⁹ s on various substrates. The time constant and voltaic sensitivity of the bolometer have been analyzed as a function of the size of the receiving pad and substrate material. The bolometer time constant, voltaic sensitivity, and equivalent voltage values of fundamental noise were calculate as a function of sizes of the receiving pad, substrate material, and frequency of recorded radiation. The values of specific heat flow and bolometer detectivity at frequencies of 1, 10, and 20 Hz measured on various dielectric substrates are presented. The bolometer modular design consists of a sealed housing with a receiver and resistance-to-voltage converter. Voltage values from the bolometer output are presented as a function of the acting constant and pulse radiation.