Thin-film transistor circuits on large-area spherical surfaces
- 19 August 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (9), 1723-1725
- https://doi.org/10.1063/1.1502199
Abstract
We report amorphous silicon thin-film transistors (TFTs) fabricated on a planar foil substrate, which is then permanently deformed to a spherical dome, where they are interconnected to inverter circuits. This dome subtends as much as with the tensile strain reaching a maximum value of on its top. Functional TFTs are obtained if design rules are followed to make stiff TFT islands of limited size on compliant substrates. Photoresist patterns for island interconnects are made on the flat structure, are plastically deformed during the shaping of the dome, and then serve to delineate interconnects deposited after deformation by lift-off. We describe the effect of deformation on the TFTs before and after deformation and the performance of TFT inverter circuits. Our results demonstrate that the concept of stiff circuit islands fabricated on deformable foil substrates is a promising approach to electronics on surfaces with arbitrary shapes.
This publication has 7 references indexed in Scilit:
- Electron mobility in amorphous silicon thin-film transistors under compressive strainApplied Physics Letters, 2001
- Monolithically integrated, flexible display of polymer-dispersed liquid crystal driven by rubber-stamped organic thin-film transistorsApplied Physics Letters, 2001
- 150°C Amorphous Silicon Thin-Film Transistor Technology for Polyimide SubstratesJournal of the Electrochemical Society, 2001
- a-Si:H thin film transistors after very high strainJournal of Non-Crystalline Solids, 2000
- Plastic Deformation of Thin Foil Substrates with Amorphous Silicon Islands into Spherical ShapesMRS Proceedings, 2000
- a-Si:H Thin-Film Transistors on Rollable 25-µ;m Thick Steel FoilMRS Proceedings, 1998
- Summary Abstract: Thermomechanical properties of glow discharge deposited silicon and silicon oxide filmsJournal of Vacuum Science & Technology A, 1988