High-resolution work function imaging of single grains of semiconductor surfaces
- 22 April 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (16), 2979-2981
- https://doi.org/10.1063/1.1471375
Abstract
The size reduction of modern electronic devices creates a growing demand for characterization tools to determine material properties on a nanometer scale. The Kelvin probe force microscope is designed to obtain laterally resolved images of the sample’s work function. Using a setup in ultrahigh vacuum, we were able to distinguish work function variations for differently oriented crystal facets of single grains on a semiconductor surface. For the tetragonal solar cell material the experiments demonstrate differences as low as 30 meV between (102) and (111) oriented surfaces and up to 255 meV between and (110) surfaces. This influences the band bending of solar cell heterostructures and consequently also the solar power conversion efficiency.
Keywords
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