Fermi level and surface barrier of GaxIn1−xAs alloys
- 1 February 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (3), 170-171
- https://doi.org/10.1063/1.92273
Abstract
The surface Fermi level of n‐type GaxIn1−xAs alloys is displaced as a function of x from above the conduction band minimum of InAs to the lower half of the band gap of GaAs. Fermi‐level pinning is attributed to an As vacancy‐related energy level located ∼0.5 eV above the valence band and invariant with x.Keywords
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