Low-dimensional Mott material: Transport in ultrathin epitaxial LaNiO3 films

Abstract

Electrical resistivity and magnetotransport are explored for thin (3–30 nm), epitaxial ${\text{LaNiO}}_3$ films. Films were grown on three different substrates to obtain ${\text{LaNiO}}_3$ films that are coherently strained, with different signs and magnitude of film strain. It is shown that $d$ -band transport is inhibited as the layers progress from compression to tension. The Hall coefficient is “holelike.” Increasing tensile strain causes the film resistivity to increase, causing strong localization to appear below a critical thickness.