Flat conduction-band alignment at the CdS/CuInSe2 thin-film solar-cell heterojunction
- 31 December 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (27), 4482-4484
- https://doi.org/10.1063/1.1428408
Abstract
By combining ultraviolet and x-ray photoelectron spectroscopy with inverse photoemission spectroscopy, we find that the conduction-band alignment at the CdS/CuInSe2 thin-film solar- cell heterojunction is flat (0.0+/-0.2 eV). Furthermore, we observe a valence-band offset of 0.8+/-0.2 eV. The electronic level alignment is dominated by (1) an unusually large surface band gap of the CuInSe2 thin film (1.4 eV), (2) by a reduced surface band gap of the CdS overlayer (2.2 eV) due to intermixing effects, and (3) by a general influence of the intermixing on the chemical state near the interfaceThis publication has 25 references indexed in Scilit:
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