GaS and GaSe nanowalls and their transformation to Ga2O3 and GaN nanowalls
- 11 July 2005
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Chemical Communications
- No. 31,p. 3995-3997
- https://doi.org/10.1039/b506676j
Abstract
Two-dimensional nanowalls of GaS and GaSe are obtained by thermal exfoliation around 900 °C, and transformed to Ga2O3 and GaN nanowalls upon reaction with air and ammonia respectively at 800 °C, while maintaining dimensional integrity.Keywords
This publication has 15 references indexed in Scilit:
- Template-Free Chemical Route to Ultrathin Single-Crystalline Films of CuS and CuO Employing the Liquid−Liquid InterfaceLangmuir, 2004
- Tubular structures of GaSPhysical Review B, 2004
- Synthesis of flower-like ZnO nanostructures by an organic-free hydrothermal processNanotechnology, 2004
- Carbon nanowalls and related materialsJournal of Materials Chemistry, 2004
- Growth of Epitaxial Nanowires at the Junctions of NanowallsScience, 2003
- Large scale preparation of zinc nanosheets by thermochemical reduction of ZnS powdersChemical Physics Letters, 2003
- Inorganic nanowiresProgress in Solid State Chemistry, 2003
- Electrochemical Synthesis and Characterization of Magnetic Nanoparticles on Carbon Nanowall TemplatesNano Letters, 2002
- Carbon Nanowalls Grown by Microwave Plasma Enhanced Chemical Vapor DepositionAdvanced Materials, 2002
- Theoretical study of the structural and electronic properties of GaSe nanotubesPhysical Review B, 1998