Investigation of Deep Submicron Single and Double Gate SOI MOSFETs in Accumulation Mode for Enhanced Performance
- 1 January 2001
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 4 (3), G28-G30
- https://doi.org/10.1149/1.1347225
Abstract
The behavior of single and double gate accumulation mode silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs) is thoroughly investigated. Accumulation mode devices present advantages over inversion mode transistors regarding transconductance, ease of fabrication, and parasitic effects. We have concluded, from experimental results and 2D simulations, that short channel effects such as DIBL and subthreshold swing degradation are substantially reduced in the volume accumulation regime, being even lower in thin-film double gate accumulation mode SOI MOSFETs than in inversion mode double gate SOI devices for adequate technological characteristics. The potential of thin-film accumulation mode SOI MOS transistors down to sub-0.1μm technologies and up to 125°C is demonstrated. © 2001 The Electrochemical Society. All rights reserved.Keywords
This publication has 5 references indexed in Scilit:
- On the subthreshold swing and short channel effects in single and double gate deep submicron SOI-MOSFETsSolid-State Electronics, 1999
- A physics-based short-channel current–voltage model for buried-channel MOSFETsSolid-State Electronics, 1999
- CMOS technology-year 2010 and beyondIEEE Journal of Solid-State Circuits, 1999
- Semiconductor thickness effects in the double-gate SOI MOSFETIEEE Transactions on Electron Devices, 1998
- Measurement of threshold voltages of thin-film accumulation-mode PMOS/SOI transistorsIEEE Electron Device Letters, 1991