Two-dimensional gallium nitride realized via graphene encapsulation
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- 29 August 2016
- journal article
- Published by Springer Science and Business Media LLC in Nature Materials
- Vol. 15 (11), 1166-1171
- https://doi.org/10.1038/nmat4742
Abstract
A method to synthesize 2D layers of gallium nitride on SiC is reported. Epitaxial graphene preliminarily grown on SiC allows intercalation of gallium atoms on the SiC substrate and stabilizes the 2D gallium nitride islands formed by ammonolysis.Keywords
This publication has 30 references indexed in Scilit:
- Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen IntercalationPhysical Review Letters, 2009
- Growth of two-dimensional GaN in Na-4 mica nanochannelsJournal of Physics D: Applied Physics, 2009
- Atomic-scale imaging and manipulation of ridges on epitaxial graphene on 6H-SiC(0001)Nanotechnology, 2009
- Polarization-Induced Zener Tunnel Junctions in Wide-Band-Gap HeterostructuresPhysical Review Letters, 2009
- Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbideNature Materials, 2009
- A gallium nitride single-photon source operating at 200 KNature Materials, 2006
- Band-structure-corrected local density approximation study of semiconductor quantum dots and wiresPhysical Review B, 2005
- Polar oxide surfacesJournal of Physics: Condensed Matter, 2000
- Structure of GaN(0001): The laterally contracted Ga bilayer modelPhysical Review B, 2000
- The stability of ionic crystal surfacesJournal of Physics C: Solid State Physics, 1979