Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition
- 1 November 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (11A), L1453
- https://doi.org/10.1143/jjap.36.l1453
Abstract
The growth of p-type ZnO film was realized for the first time by the simultaneous addition of NH3 in carrier hydrogen and excess Zn in source ZnO powder. The resistivity was typically 100 Ω·cm. A model showing nitrogen incorporation suggests the possibility of realizing p-type ZnO film of low resistivity by optimizing thermal annealing.Keywords
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