Subthreshold analysis of an MOS analog switch
- 1 January 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 44 (1), 89-96
- https://doi.org/10.1109/16.554798
Abstract
Charge injection error in the presence of sub- threshold effects has been analyzed. It is confirmed that the subthreshold effect is significant at low voltage falling rates. A simplified model is derived using an appropriate approximation. Predictions are compared to the results of a SPICE simulation, a nonquasi-static (NQS) model simulation and experimental results. Excellent agreement between the modified and NQS model and recently published experimental results was obtained. This ana- lytical model is computationally efficient compared to the SPICE and NQS models and provides physical insight into the switching errors.Keywords
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