Flexible high capacitance gate insulators for organic field effect transistors
- 10 December 2003
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 37 (1), 21-24
- https://doi.org/10.1088/0022-3727/37/1/005
Abstract
We have manufactured flexible field effect transistors with both polymeric and low molecular weight organic semiconductors onto a very thin (6.5 nm) gate insulator with capacitance in excess of 600 nF cm−2. Gate insulators were prepared by anodization of a sputtered aluminium film on a Mylar plastic sheet. Anodization protocols in very dilute acid and in pure water, were explored and results compared.Keywords
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