Controlled n-type doping of antimonides and arsenides using GaTe
- 30 April 2003
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 251 (1-4), 532-537
- https://doi.org/10.1016/s0022-0248(02)02186-3
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Metallization options and annealing temperatures for low contact resistance ohmic contacts to n-type GaSbSolid-State Electronics, 2002
- Engineered heterostructures of 6.1-Angstrom III-V semiconductors for advanced electronic and optoelectronic applicationsPublished by SPIE-Intl Soc Optical Eng ,1999
- n-Channel AlSbGaSb modulation-doped field-effect transistorsSolid-State Electronics, 1997
- MBE growth of Si-doped InAlAsSb layers lattice-matched with InAsJournal of Crystal Growth, 1997
- Heuristic rules for group IV dopant site selection in III–V compoundsJournal of Crystal Growth, 1997
- Molecular-beam epitaxial growth of high-mobility n-GaSbJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- High-transconductance InAs/AlSb heterojunction field-effect transistors with delta -doped AlSb upper barriersIEEE Electron Device Letters, 1992
- N- type doping of gallium antimonide and aluminum antimonide grown by molecular beam epitaxy using lead telluride as a tellurium dopant sourceJournal of Electronic Materials, 1988
- Heterojunction bipolar transistor utilising AlGaSb/GaSb alloy systemElectronics Letters, 1988
- ’’Surface exchange’’ doping of MBE GaAs from S and Se ’’captive sources’’Applied Physics Letters, 1978