Mechanism of the quenching of the Hall effect

Abstract

Quantum mechanical calculations of electron scattering at junctions of 1D conductors are presented together with an analysis of the implications for experimentally measured transport coefficients. Resonant electron states intrinsic to such junctions give rise at low B to quenching of the Hall voltage, maxima in the longitudinal resistance, and anomalous Hall plateaus. At high B they show up as sharp features in $R_H$ and $R_L$ which track the bottoms of 1D subbands. Quenching of the Hall voltabe is found for ≤3 populated 1D subbands. The other resonant phenomena occur also at higher band fillings.