Rubrene single crystal field-effect transistor with epitaxial BaTiO3 high-k gate insulator
- 9 October 2006
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (15), 152110
- https://doi.org/10.1063/1.2360207
Abstract
High quality BaTiO3 thin-film epitaxially grown on a Nb-doped SrTiO3 (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high-k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant ϵ of 280esu for the prepared BaTiO3 thin-film accumulates 0.1holes∕rubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04holes∕rubrene-molecule attained in the case of SiO2. This is the highest carrier number so far obtained in organic field-effect transistors (FETs). Other important parameters of rubrene single crystal FETs on BTO/Nb-STO are described in comparison with those on SiO2/doped-Si.Keywords
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