Electrical characteristics of Al/SiO2/n-Si tunnel diodes with an oxide layer grown by rapid thermal oxidation
- 31 March 1994
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 37 (3), 433-441
- https://doi.org/10.1016/0038-1101(94)90009-4
Abstract
No abstract availableThis publication has 26 references indexed in Scilit:
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