Fabrication and Characteristics of Schottky Gated Poly(3-alkylthiophene) Field Effect Transistors
- 1 April 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (4A), L610-611
- https://doi.org/10.1143/jjap.30.l610
Abstract
Fabrication and characterization of Schottky gated poly(3-alkylthiophene) field effect transistors have been reported. The transistors have been realized using free-standing poly(3-alkylthiophene) films with Schottky gated electrode configuration with low drive voltages. From the FET characteristics, the carrier mobility is evaluated to be 3×10-3 cm2/V·s.Keywords
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