Through-silicon via and die stacking technologies for microsystems-integration
- 1 December 2008
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The highest integration density of microsystems can be obtained using a 3D-stacking approach, where each layer of the stack is realized using a different technology, which may include sensors, imagers, rf and MEMS technologies. A key challenge is however to perform such stacking in a cost-effective manner. In this paper, a novel 3D TSV and 3D stacking technologies will be presented. Application examples are MEMS packaging and heterogeneous integration of imaging devices.Keywords
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