Influence of oxygen flow during sputtering process on the electrical properties of Ga-doped InZnSnO thin film transistor
- 31 March 2021
- journal article
- research article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 36 (4), 045006
- https://doi.org/10.1088/1361-6641/abe140
Abstract
This work presents the electrical properties of amorphous gallium-doped indium zinc tin oxide (Ga-IZTO) thin film transistors (TFTs), as a function of O-2 flow rate (Ar/O-2), during the sputtering process of the channel layer. As the O-2 flow rate increased from 30:0 to 30:7, the saturation mobility (mu SAT ) monotonically degraded from 31.5 cm(2) V-1 s(-1) to 12.0 cm(2) V-1 s(-1), the threshold voltage (V-TH) shifted from 0.8 V to 6.8 V, and the V-TH shift (Delta V-TH) induced by the negative bias stress improved from -7.0 V to -2.8 V. X-ray diffraction analysis indicated that the microstructure of all the films is amorphous, which is independent of O-2 flow rate. Transmittance spectra reflected that the average transmittance of the thin film is sensitive to the O-2 flow rate and decreases as the O-2 flow rate increases. XPS analysis revealed that the density of oxygen vacancies is reduced, and the oxygen lattices are enhanced as the O-2 flow rate increases. The Hall effect measurements indicated that the carrier concentration (n) was reduced with increasing O-2 flow rate. These results show that the electrical properties of Ga-IZTO TFTs can be easily tuned by the O-2 flow rate during the sputtering process. The related mechanism for the variations of electrical properties of Ga-IZTO TFT has been discussed in detail.Keywords
Funding Information
- Fundamental Research Funds for the Central Universities (2020YJS188)
- National Natural Science Foundation of China (51772019)
This publication has 42 references indexed in Scilit:
- Electrical instability of amorphous indium-gallium-zinc oxide thin film transistors under monochromatic light illuminationApplied Physics Letters, 2012
- Oxide Semiconductor Thin‐Film Transistors: A Review of Recent AdvancesAdvanced Materials, 2012
- Electrical and band-gap properties of amorphous zinc–indium–tin oxide thin filmsProgress in Natural Science: Materials International, 2012
- The status and perspectives of metal oxide thin-film transistors for active matrix flexible displaysSemiconductor Science and Technology, 2011
- High-Performance Solution-Processed Amorphous Zinc−Indium−Tin Oxide Thin-Film TransistorsJournal of the American Chemical Society, 2010
- Role of Gallium Doping in Dramatically Lowering Amorphous‐Oxide Processing Temperatures for Solution‐Derived Indium Zinc Oxide Thin‐Film TransistorsAdvanced Materials, 2010
- Present status of amorphous In–Ga–Zn–O thin-film transistorsScience and Technology of Advanced Materials, 2010
- Bulk defect chemistry and surface electronic behavior of Zn,Sn codoped In2O3 transparent conducting oxidesPhysical Chemistry Chemical Physics, 2009
- Fabrication of transparent conducting amorphous Zn–Sn–In–O thin films by direct current magnetron sputteringThin Solid Films, 2008
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductorsNature, 2004