Low-temperature operation of silicon dynamic random-access memories
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (8), 1423-1428
- https://doi.org/10.1109/16.30954
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- Leakage studies in high-density dynamic MOS memory devicesIEEE Transactions on Electron Devices, 1979
- Very small MOSFET's for low-temperature operationIEEE Transactions on Electron Devices, 1977
- Theory of TunnelingJournal of Applied Physics, 1961