Trench sidewall implantation with a parallel scanned ion beam
- 1 April 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (4), 1052-1056
- https://doi.org/10.1109/16.52441
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- 4 Mbit TechnologyPublished by Springer Science and Business Media LLC ,1989
- As-ion-implantation simulation for trench structures using Monte Carlo methodIEEE Transactions on Electron Devices, 1988
- A new isolation method with boron-implanted sidewalls for controlling narrow-width effectIEEE Transactions on Electron Devices, 1987
- Ion implantation into three-dimensional structuresNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Depth Profiles of Boron Atoms with Large Tilt‐Angle ImplantationsJournal of the Electrochemical Society, 1986