Theoretical comparison of the stability characteristics of capped and uncapped GexSi1−x strained epilayers
- 31 August 1992
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 35 (8), 1073-1079
- https://doi.org/10.1016/0038-1101(92)90007-y
Abstract
No abstract availableKeywords
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