Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates
- 1 January 2011
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 158 (5), H530-H535
- https://doi.org/10.1149/1.3560527
Abstract
AlN and AlGaN epitaxial films were deposited by metal organic chemical vapor deposition on single crystal AlN substrates processed from AlN boules grown by physical vapor transport. Structural, chemical, and optical characterization demonstrated the high crystalline quality of the films and interfaces.Keywords
This publication has 19 references indexed in Scilit:
- AlN substrates and epitaxy resultsphysica status solidi (c), 2010
- Pseudomorphic growth of thick n-type AlxGa1−xN layers on low-defect-density bulk AlN substrates for UV LED applicationsJournal of Crystal Growth, 2009
- Photoluminescence properties of AlN homoepilayers with different orientationsApplied Physics Letters, 2008
- Modulated precursor flow epitaxial growth of AlN layers on native AlN substrates by metal-organic chemical vapor depositionApplied Physics Letters, 2008
- Heteroepitaxy of AlGaN on bulk AlN substrates for deep ultraviolet light emitting diodesApplied Physics Letters, 2007
- X-Ray Photoelectron Spectroscopy Characterization of Aluminum Nitride Surface Oxides: Thermal and Hydrothermal EvolutionJournal of Electronic Materials, 2007
- An aluminium nitride light-emitting diode with a wavelength of 210 nanometresNature, 2006
- Short-period superlattices of AlN∕Al0.08Ga0.92N grown on AlN substratesApplied Physics Letters, 2004
- Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystalsJournal of Crystal Growth, 2002
- Epitaxial growth of AlN and Al0.5Ga0.5N layers on aluminum nitride substratesApplied Physics Letters, 2000