Study of grain growth of polysilicon formed by nickel-induced-lateral-crystallization of amorphous silicon and subsequent high temperature annealing
- 17 December 2001
- journal article
- Published by Elsevier BV in Thin Solid Films
- Vol. 406 (1-2), 17-22
- https://doi.org/10.1016/s0040-6090(01)01722-9
Abstract
No abstract availableKeywords
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