Oxygen vacancy migration and time-dependent leakage current behavior of Ba0.3Sr0.7TiO3 thin films
- 7 March 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (11)
- https://doi.org/10.1063/1.1874313
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Oxygen-vacancy ordering as a fatigue mechanism in perovskite ferroelectricsApplied Physics Letters, 2000
- A model for fatigue in ferroelectric perovskite thin filmsApplied Physics Letters, 2000
- Dielectric and electrical properties of sputter grown (Ba,Sr)TiO3 thin filmsJournal of Applied Physics, 1999
- Variations of the leakage current density and the dielectric constant of Pt/(Ba,Sr)TiO3/Pt capacitors by annealing under a N2 atmosphereJournal of Applied Physics, 1999
- Resistance degradation behavior of Ba0.7Sr0.3TiO3 thin films compared to mechanisms found in titanate ceramics and single crystalsIntegrated Ferroelectrics, 1998
- A review of high dielectric materials for DRAM capacitorsIntegrated Ferroelectrics, 1997
- An Important Failure Mechanism in MOCVD (Ba,Sr)TiO3 thin Films: Resistance DegradationMRS Proceedings, 1997
- Voltage shifts and imprint in ferroelectric capacitorsApplied Physics Letters, 1995
- GaAs MMIC Chip-sets for mobile communication systems with on-chip ferroelectric capacitorsIntegrated Ferroelectrics, 1995
- dc Electrical Degradation of Perovskite‐Type Titanates: I, CeramicsJournal of the American Ceramic Society, 1990