Novel Nonvolatile Memory with Multibit Storage Based on a ZnO Nanowire Transistor
- 14 October 2010
- journal article
- research article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 10 (11), 4316-4320
- https://doi.org/10.1021/nl1013713
Abstract
We demonstrate a room temperature processed ferroelectric (FE) nonvolatile memory based on a ZnO nanowire (NW) EFT where the NW channel is coated with FE nanoparticles. A single device exhibits excellent memory characteristics with the large modulation in channel conductance between ON and OFF states exceeding 10(4), a long retention time of over 4 x 10(4) s, and multibit memory storage ability. Our findings provide a viable way to create new functional high-density nonvolatile memory devices compatible with simple processing techniques at low temperature for flexible devices made on plastic substrates.Keywords
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