Integration of Spin-RAM technology in FPGA circuits

Abstract

In this paper, the paper propose a new non-volatile FPGA circuit based on spin-RAM technology (spin transfer torque magnetisation switching RAM), new generation of MRAM (magnetic RAM). This spin-RAM based FPGA circuit could process securely the information in low power dissipation and high speed; meanwhile all the data processed are stored permanently in the distributed spin-RAM memory. In this non-volatile FPGA design, MTJs (magnetic tunnel junction) are used as storage elements. Contrary to conventional MRAM circuits we don't use a complex sense amplifier, but a simple SRAM based sense amplifier couples two MTJs per bit. The non-volatility of spin-RAM allows the dynamical configuration of FPGA circuits and the start-up time of circuit can be decreased up to some hundred pico seconds. As conventional MRAM, the MTJs of spin-RAM will be on the semiconductor surface; therefore the circuit die area will not be enlarged comparing with the conventional FPGA