Area Density Control of Quantum-Size InGaAs/Ga(Al)As Dots by Metalorganic Chemical Vapor Deposition
- 1 November 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (11B), L1634
- https://doi.org/10.1143/jjap.33.l1634
Abstract
We have investigated the accumulation of InGaAs dots ( ∼15 nm) on GaAs and AlGaAs surfaces, by metalorganic chemical vapor deposition (MOCVD). Scanning electron micrography (SEM) shows highly uniform dots formed by the Stranski-Krastanow growth mode. The average area InGaAs dot density can be controlled from 108 cm-2 up to more than 1011 cm-2 by substrate off-angle orientation, deposition thickness, and growth temperature. The results indicate high area dot density for low surface diffusion.Keywords
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