p-type zinc-blende GaN on GaAs substrates
- 16 August 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (7), 932-933
- https://doi.org/10.1063/1.109848
Abstract
We report p‐type cubic GaN. The Mg‐doped layers were grown on vicinal (100) GaAs substrates by plasma‐enhanced molecular beam epitaxy. Thermally sublimed Mg was, with N2 carrier gas, fed into an electron‐cyclotron resonance source. p‐type zinc‐blende‐structure GaN films were achieved with hole mobilities as high as 39 cm2/V s at room temperature. The cubic nature of the films were confirmed by x‐ray diffractometry. The depth profile of Mg was investigated by secondary ions mass spectroscopy.Keywords
This publication has 8 references indexed in Scilit:
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- In situ monitoring and Hall measurements of GaN grown with GaN buffer layersJournal of Applied Physics, 1992
- High-Power GaN P-N Junction Blue-Light-Emitting DiodesJapanese Journal of Applied Physics, 1991
- GaN Growth Using GaN Buffer LayerJapanese Journal of Applied Physics, 1991
- An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986
- On the origin of free carriers in high‐conducting n‐GaNCrystal Research and Technology, 1983