Silicon and germanium clusters. A theoretical study of their electronic structures and properties

Abstract

Silicon and germanium clusters containing three to seven atoms have been studied with the pseudopotential MO‐LCAO method followed by configuration interaction procedure. Si and Ge clusters have very similar electronic structures and consequently analogous physico‐chemical properties but differ substantially from small carbon clusters. Linear structures are clearly less favorable than more compact structures. On the other hand, some planar geometries possess considerable stability. The Si and Ge clusters which are sections of the diamond‐type crystal lattice are less stable than clusters which can be considered as segments of closed‐packed lattices or as steps in pentagonal crystal growth. The reason is that the majority of atoms in small clusters are surface atoms which cannot assume the tetrahedral coordination characteristic of Si and Ge bulk atoms. The appearance of typical bulk properties is expected only for very large Si and Ge clusters with small surface atoms/bulk atoms ratio.