The Electron Trap Mechanism of Luminescence in Sulphide and Silicate Phosphors

Abstract

Phosphorescence and thermoluminescence emission from photoconducting impurity activated phosphors have been satisfactorily explained by the storage of electrons, freed from luminescence centres or other atoms of the solid, in metastable energy levels known as electron traps. Electrons escaping from these traps give rise to emission when they recombine with luminescence centres but there is a probability that they may be retrapped in empty electron traps before their final recombination with centres. The present theoretical and experimental studies attempt to determine the extent to which retrapping does occur and what effects it will have in modifying the phosphorescence and thermoluminescence characteristics. Theoretical treatment shows that there are marked differences in these characteristics for conditions when the retrapping process is present and for those when it is negligible. Experimental investigations of the characteristics of specimens of zinc sulphide, zinc silicate and strontium silicate phosphors indicate that, except under special conditions, retrapping of electrons is negligible. These results together with other work can be explained theoretically if it is assumed that electron traps operative in the luminescence process are spatially associated with the immediate neighbourhood of the luminescence centres formed by activating impurities. This new concept is also supported by the relations found between the luminescence characteristics and the dielectric changes in phosphors of the zinc sulphide type.