Epitaxial growth of Al-doped ZnO thin films grown by pulsed laser deposition
- 1 December 2002
- journal article
- Published by Elsevier BV in Thin Solid Films
- Vol. 420-421, 107-111
- https://doi.org/10.1016/s0040-6090(02)00658-2
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- The effect of deposition temperature on the properties of Al-doped zinc oxide thin filmsThin Solid Films, 2001
- Effect of aluminum doping on zinc oxide thin films grown by pulsed laser deposition for organic light-emitting devicesThin Solid Films, 2000
- Transparent conducting aluminum-doped zinc oxide thin films for organic light-emitting devicesApplied Physics Letters, 2000
- High transmittance–low resistivity ZnO:Ga films by laser ablationJournal of Vacuum Science & Technology A, 1996
- Determination of the mechanical properties of r.f.-magnetron-sputtered zinc oxide thin films on substratesThin Solid Films, 1995
- Quantitative structure analyses of thin films: Determination of oxygen content from x-ray-diffraction patternsPhysical Review B, 1993
- Preparations of ZnO:Al transparent conducting films by d.c. magnetron sputteringThin Solid Films, 1990
- Highly Oriented ZnO Films Prepared by MOCVD from Diethylzinc and AlcoholsJapanese Journal of Applied Physics, 1985
- Oxygen stoichiometry in the system (CaxSr1−x)FeO3−y. Its effect on crystallographic and thermodynamic propertiesMaterials Research Bulletin, 1981
- Anomalous Optical Absorption Limit in InSbPhysical Review B, 1954