The electrical resistivity of bismuth: intervalley scattering
- 1 June 1976
- journal article
- Published by IOP Publishing in Journal of Physics F: Metal Physics
- Vol. 6 (6), L181-L184
- https://doi.org/10.1088/0305-4608/6/6/003
Abstract
The electrical resistivity of bismuth from 4.2 to 300K can be explained in terms of a simple model which includes residual, intravalley and intervalley contributions to the total resistivity. Following Lopez (1968), two single-phonon intervalley processes are assumed, and reasonable values are found for the two characteristic phonon energies by curve fitting. The approximate T2 behaviour commonly reported for the electrical transport properties of bismuth emerges as a natural consequence of the above combination of contributions to the total resistivity.Keywords
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