Strain-Balanced ${\rm Ge}_{z}{\rm Sn}_{1-z}\hbox{--}{\rm Si}_{x}{\rm Ge}_{y}{\rm Sn}_{1-x-y}$ Multiple-Quantum-Well Lasers
- 1 November 2010
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 46 (12), 1813-1820
- https://doi.org/10.1109/jqe.2010.2059000
Abstract
We propose and analyze a strain-balanced GezSn1-z-SixGeySn1-x-y multiple-quantum-well (MQW) laser. By incorporating a proper amount of -Sn into Ge, a direct-bandgap GeSn alloy can be realized to achieve population inversion in the direct conduction band. The introduction of compressive strain into the GeSn QW can effectively modify the valence band structure to reduce the threshold carrier density. We calculate the electronic band structure and the polarization-dependent optical gain of the strained GezSn1-z-SixGeySn1-x-y MQW laser taking into account the effect of the L-conduction bands. We also present our waveguide design for index guidance and calculate the optical confinement factors of various regions. Our calculation indicates that the modal gain can reach the threshold condition and lead to lasing action.Keywords
This publication has 33 references indexed in Scilit:
- Sn-alloying as a means of increasing the optical absorption of Ge at theC- andL-telecommunication bandsSemiconductor Science and Technology, 2009
- Mid-Infrared 2—5 μm Heterojunction Laser DiodesPublished by Springer Science and Business Media LLC ,2007
- Room-temperature operation of 3.26μm GaSb-based type-I lasers with quinternary AlGaInAsSb barriersApplied Physics Letters, 2005
- Measurement of the direct energy gap of coherently strained SnxGe1−x/Ge(001) heterostructuresApplied Physics Letters, 2000
- Theory and experiment of In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/ and In/sub 1-x-y/Ga/sub x/Al/sub y/As long-wavelength strained quantum-well lasersIEEE Journal of Quantum Electronics, 1999
- Low-temperature growth and critical epitaxial thicknesses of fully strained metastable Ge1−xSnx (x≲0.26) alloys on Ge(001)2×1Journal of Applied Physics, 1998
- Room-temperature 2.78 μm AlGaAsSb/InGaAsSb quantum-well lasersApplied Physics Letters, 1995
- Silicon Dioxide (SiO2) (Glass)Published by Elsevier BV ,1985
- Silicon (Si)Published by Elsevier BV ,1985
- Germanium (Ge)Published by Elsevier BV ,1985