Defect structure of degraded heterojunction GaAlAs−GaAs lasers
- 1 March 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (5), 250-252
- https://doi.org/10.1063/1.88139
Abstract
Transmission electron microscopy has been used to study the defects associated with the degradation of broad−contact geometry double−heterostructure lasers. Two different types of dislocation networks have been observed close to the active region of the degraded device having Burgers vectors of (a/2) 〈011〉 and a〈001〉. Both networks have been shown to be of interstitial character.Keywords
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