General Synthesis of Manganese-Doped II−VI and III−V Semiconductor Nanowires

Abstract

A general approach for the synthesis of manganese-doped II−VI and III−V nanowires based on metal nanocluster-catalyzed chemical vapor deposition has been developed. High-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy studies of Mn-doped CdS, ZnS, and GaN nanowires demonstrate that the nanowires are single-crystal structures and homogeneously doped with controllable concentrations of manganese ions. Photoluminescence measurements of individual Mn-doped CdS and ZnS nanowires show characteristic pseudo-tetrahedral Mn²⁺ (⁴T₁ → ⁶A₁) transitions that match the corresponding transitions in bulk single-crystal materials well. Photoluminescence studies of Mn-doped GaN nanowires suggest that manganese is incorporated as a neutral (Mn³⁺) dopant that partially quenches the GaN band-edge emission. The general and controlled synthesis of nanowires doped with magnetic metal ions opens up opportunities for fundamental physical studies and could lead to the development of nanoscale spintronic devices.