The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski silicon single crystals grown in a transverse magnetic field
- 31 March 2000
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 210 (4), 532-540
- https://doi.org/10.1016/s0022-0248(99)00516-3
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski-grown silicon crystalsJournal of Crystal Growth, 1998
- Fluid MechanicsPublished by Springer Science and Business Media LLC ,1997
- Evaporation of Oxygen-Bearing Species from Si Melt and Influence of Sb AdditionJapanese Journal of Applied Physics, 1994