Low-temperature Au–Si wafer bonding
- 10 August 2010
- journal article
- Published by IOP Publishing in Journal of Micromechanics and Microengineering
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Amorphous Si∕Au wafer bondingApplied Physics Letters, 2007
- A study on wafer level vacuum packaging for MEMS devicesJournal of Micromechanics and Microengineering, 2003
- Double-sided bulk micromachining of silicon-on-insulator films using room-temperature oxygen plasma assisted bondingJournal of Micromechanics and Microengineering, 2002
- Wafer-to-wafer bonding of nonplanarized MEMS surfaces using solderJournal of Micromechanics and Microengineering, 2001
- Formation of Silicon-Gold Eutectic Bond Using Localized Heating MethodJapanese Journal of Applied Physics, 1998
- Wafer-to-wafer bonding for microstructure formationProceedings of the IEEE, 1998
- Low-temperature intermediate Au-Si wafer bonding; eutectic or silicide bondSensors and Actuators A: Physical, 1997
- Assembling three-dimensional microstructures using gold-silicon eutectic bondingSensors and Actuators A: Physical, 1994
- Low-temperature silicon wafer-to-wafer bonding using gold at eutectic temperatureSensors and Actuators A: Physical, 1994
- Formation of silicon oxide over gold layers on silicon substratesJournal of Applied Physics, 1972