Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers
- 1 July 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 45 (7), 1595-1604
- https://doi.org/10.1109/16.701494
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Edge terminations for SiC high voltage Schottky rectifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Trends in power semiconductor devicesIEEE Transactions on Electron Devices, 1996
- Silicon carbide high-power devicesIEEE Transactions on Electron Devices, 1996
- Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge terminationIEEE Electron Device Letters, 1996
- Planar edge termination for 4H-silicon carbide devicesIEEE Transactions on Electron Devices, 1996
- The guard-ring termination for the high-voltage SiC Schottky barrier diodesIEEE Electron Device Letters, 1995
- High performance of high-voltage 4H-SiC Schottky barrier diodesIEEE Electron Device Letters, 1995
- SiC power device passivation using porous SiCApplied Physics Letters, 1995
- A simple edge termination for silicon carbide devices with nearly ideal breakdown voltageIEEE Electron Device Letters, 1994
- Silicon-carbide high-voltage (400 V) Schottky barrier diodesIEEE Electron Device Letters, 1992