Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(111) substrate
- 5 December 2003
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 263 (1-4), 4-11
- https://doi.org/10.1016/j.jcrysgro.2003.11.001
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- The growth morphologies of GaN layer on Si(111) substrateJournal of Crystal Growth, 2003
- Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layerJournal of Crystal Growth, 2002
- Structural investigation of GaN layers grown on Si(111) substrates using a nitridated AlAs buffer layerJournal of Crystal Growth, 2000
- The effect of AlN buffer layer on GaN grown on (111)-oriented Si substrates by MOCVDJournal of Crystal Growth, 2000
- GaN heteroepitaxial growth on silicon nitride buffer layers formed on Si (111) surfaces by plasma-assisted molecular beam epitaxyApplied Physics Letters, 1998
- Wurtzite GaN epitaxial growth on a Si(001) substrate using γ-Al2O3 as an intermediate layerApplied Physics Letters, 1998
- High quality GaN–InGaN heterostructures grown on (111) silicon substratesApplied Physics Letters, 1996
- High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substratesApplied Physics Letters, 1995
- The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layerJournal of Crystal Growth, 1993
- Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layerJournal of Crystal Growth, 1991