High-efficiency p-i-n organic light-emitting diodes with long lifetime
- 1 January 2005
- journal article
- Published by Wiley in Journal of the Society for Information Display
- Vol. 13 (5), 393-1
- https://doi.org/10.1889/1.1927730
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Very high-efficiency and low voltage phosphorescent organic light-emitting diodes based on a p-i-n junctionJournal of Applied Physics, 2004
- Operational stability of electrophosphorescent devices containing p and n doped transport layersApplied Physics Letters, 2003
- Current status of electrophosphorescent device stabilityOrganic Electronics, 2003
- A low drive voltage, transparent, metal-free n–i–p electrophosphorescent light emitting diodeOrganic Electronics, 2003
- High-efficiency electrophosphorescent organic light-emitting diodes with double light-emitting layersApplied Physics Letters, 2002
- Organic light emitting devices with enhanced operational stability at elevated temperaturesApplied Physics Letters, 2002
- Controlledp-type doping of polycrystalline and amorphous organic layers: Self-consistent description of conductivity and field-effect mobility by a microscopic percolation modelPhysical Review B, 2001
- High-efficiency organic electrophosphorescent devices with tris(2-phenylpyridine)iridium doped into electron-transporting materialsApplied Physics Letters, 2000
- Bright organic electroluminescent devices having a metal-doped electron-injecting layerApplied Physics Letters, 1998
- Organic electroluminescent diodesApplied Physics Letters, 1987