Transport properties of CuIn1−xAlxSe2/AZnO heterostructure for low cost thin film photovoltaics
- 5 November 2013
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Dalton Transactions
- Vol. 43 (5), 1974-1983
- https://doi.org/10.1039/c3dt52515e
Abstract
CuIn1−xAlxSe2 (CIASe) thin films were grown by a simple sol–gel route followed by annealing under vacuum. Parameters related to the spin–orbit (ΔSO) and crystal field (ΔCF) were determined using a quasi-cubic model. Highly oriented (002) aluminum doped (2%) ZnO, 100 nm thin films, were co-sputtered for CuIn1−xAlxSe2/AZnO based solar cells. Barrier height and ideality factor varied from 0.63 eV to 0.51 eV and 1.3186 to 2.095 in the dark and under 1.38 A.M 1.5 solar illumination respectively. Current–voltage characteristics carried out at 300 K were confined to a triangle, exhibiting three limiting conduction mechanisms: Ohms law, trap-filled limit curve and SCLC, with 0.2 V being the cross-over voltage, for a quadratic transition from Ohm's to Child's law. Visible photodetection was demonstrated with a CIASe/AZO photodiode configuration. Photocurrent was enhanced by one order from 3 × 10−3 A in the dark at 1 V to 3 × 10−2 A upon 1.38 sun illumination. The optimized photodiode exhibits an external quantum efficiency of over 32% to 10% from 350 to 1100 nm at high intensity 17.99 mW cm−2 solar illumination. High responsivity Rλ ∼ 920 A W−1, sensitivity S ∼ 9.0, specific detectivity D* ∼ 3 × 1014 Jones, make CIASe a potential absorber for enhancing the forthcoming technological applications of photodetection.Keywords
This publication has 32 references indexed in Scilit:
- Study of the chalcopyrite Cu(In,Al)Se2 crystalline growth by selenization of different evaporated precursors ratiosJournal of Crystal Growth, 2011
- Near-infrared photodetector with CuIn1−x AlxSe2 thin filmApplied Physics Letters, 2011
- Selenization of co-sputtered CuInAl precursor filmsSolar Energy Materials and Solar Cells, 2010
- Structural and optical properties of CuIn1−xAlxSe2 thin films prepared by four-source elemental evaporationSolid State Communications, 2003
- High-efficiency solar cells based on Cu(InAl)Se2 thin filmsApplied Physics Letters, 2002
- CuIn 1−x Al x Se 2 thin films and solar cellsJournal of Applied Physics, 2002
- Near-infrared metal–semiconductor–metal photodetector integrated on siliconThin Solid Films, 2001
- Electrical characterization of Cu(In,Ga)Se2 thin-film solar cells and the role of defects for the device performanceSolar Energy Materials and Solar Cells, 2001
- Optical properties of CuAlX2 (X=Se, Te) thin films obtained by annealing of copper, aluminum and chalcogen layers sequentially depositedThin Solid Films, 2000
- Optical properties and electronic band structure of CuInSe2Solar Cells, 1986