LDMOSFET and SiGe:C HBT integrated in a 0.25?m BiCMOS technology for RF-PA applications

Abstract

An optimized LDMOSFET and a SiGe:C HBT for PA design, integrated in a BiCMOS technology, are described in this article. Each device of interest, for PA applications, is highlighted via its electrical performance - static, small and large signal.

Keywords

HETEROJUNCTION BIPOLAR TRANSISTORS
BICMOS INTEGRATED CIRCUITS
RADIO FREQUENCY
DESIGN OPTIMIZATION
CMOS TECHNOLOGY
METAL-INSULATOR STRUCTURES
CMOS PROCESS
INDUCTORS
INTEGRATED CIRCUIT TECHNOLOGY
SILICON

This publication has 2 references indexed in Scilit:

Integration and optimisation of a high performance RF lateral DMOS in an advanced BiCMOS technology
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2004
High performance silicon LDMOS technology for 2 GHz RF power amplifier applications
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002

Cited by 3 articles