Evidence for Self-Activated Luminescence in GaAs: The Gallium Vacancy-Donor Center
- 15 April 1968
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 168 (3), 922-928
- https://doi.org/10.1103/physrev.168.922
Abstract
Evidence for self-activated luminescence at 1.2 eV at low temperatures in -type GaAs was obtained by a comparison with ZnS luminescence. Both luminescence lines have a Gaussian-like shape, and a similar temperature dependence of half-width, peak energy, and intensity. The half-width temperature variation was predicted by the configurational coordinate model. A vibrational energy of 0.022 eV is calculated for the excited state of the center. The luminescence was observed in GaAs samples doped with a single donor to a carrier concentration of from 1× to 5×/cc. The following donors were studied: C, Si, Ge, Sn, S, Se, and Te. Each donor modified the luminescence to some extent, and the emission peak energy shift of 0.02 eV of group-IV donors from group-VI donors in the same period is similar, though smaller, to the shift observed in the analogous centers in ZnS and ZnSe. This supports the conclusion that the center is a gallium vacancy bound to a donor.
Keywords
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